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| Semiconductor STK1820F Advanced Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features * * * * High Voltage: BVDSS=200V(Min.) Low Crss : Crss=22pF(Typ.) Low gate charge : Qg=30nC(Typ.) Low RDS(on) :RDS(on)=0.17(Max.) Type NO. STK1820F Marking STK1820 Package Code TO-220F-3L Ordering Information Outline Dimensions unit : mm 9.80~10.20 3.05~3.35 2.60~3.00 15.40~15.80 12.20~12.60 9.10~9.30 1.07 Min. 0.90 Max. 0.60 Max. 2.54 Typ. 2.54 Typ. 1 2 3 0.60 Max. 3.46 Typ. 4.70 Max. 2.70 Max. PIN Connections 1. Gate 2. Drain 3. Source KSD-T0O011-000 1 STK1820F Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * (Tc=25C) Symbol VDSS VGSS ID (Tc=25) (Tc=100) IDP PD IAS EAS IAR EAR TJ Tstg Rating 200 30 18 8.6 72 30 18 396 18 13.9 150 -55~150 Unit V V A A A W A mJ A mJ C Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 4.16 62.5 Unit /W KSD-T0O011-000 2 STK1820F Electrical Characteristics Characteristic Drain-source breakdown voltage Gate-threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge (Tc=25C) Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250A, VGS=0 ID=250A, VDS= VGS VDS=200V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=9A VDS=40V, ID=9A VGS=0V, VDS=25V, f=1MHz Min. 200 2.0 - Typ. 0.14 8.5 840 150 22 24 29 68 29 30 4.8 11.5 Max. 4.0 10 100 0.17 1260 225 33 36 43 102 43 45 7.2 17.3 Unit V V A nA S pF VDD=100V, ID=18A RG=25 - - ns VDD=100V, VGS=10V ID=18A - nC - Source-Drain Diode Ratings and Characteristics Characteristic Continuous source current Source current (Pulsed) Forward voltage Reverse recovery time Reverse recovery charge (Tc=25C) Symbol IS ISP VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=18A Is=18A, VGS=0V dis/dt=100A/us Min - Typ 253 2.63 Max 18 72 1.4 - Unit A V ns uC Note ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=2.0mH, IAS=18A, VDD=50V, RG=25 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature KSD-T0O011-000 3 STK1820F Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS : - Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG KSD-T0O011-000 4 STK1820F Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ C C Fig. 9 ID - TC Fig. 10 Safe Operating Area * KSD-T0O011-000 5 STK1820F Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T0O011-000 6 STK1820F Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T0O011-000 7 STK1820F The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T0O011-000 8 |
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